BLF245 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
From Advanced Semiconductor, Inc.
| Status | ACTIVE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 65 V |
| Drain Current-Max (ID) | 6 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
| Mfr Package Description | 0.380 INCH, FM-4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | ROUND |
| Package Style | FLANGE MOUNT |
| Terminal Form | FLAT |
| Terminal Position | RADIAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | RF POWER |
