2N3810+JAN PNP Monolithic Transistor Pair
From Defense Supply Center Columbus
@I(C) (A) (Test Condition) | 1.0m |
@V(CBO) (V) (Test Condition) | 50 |
@V(CE) (V) (Test Condition) | 5.0 |
Emitter-Base Diode (Y/N) | No |
I(C) Abs.(A) Collector Current | 50m |
I(CBO) Max. (A) | 10u |
Mil Number | JAN2N3810 |
Military | Y |
Number of Devices | 2 |
P(D) Max.(W) Power Dissipation | 0.6 |
Package | TO-78 |
Semiconductor Material | Silicon |
Type (NPN/PNP) | PNP |
V(BR)CBO (V) | 60 |
V(BR)CEO (V) | 60 |
h(FE) Max. Current gain. | 450 |
h(FE) Min. Static Current Gain | 150 |