Did you mean: FDB3632
Product Datasheet Search Results:
14 Pages, 762 KB, Original- FDB3632
- Fairchild Semiconductor Corporation
- 12 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
12 Pages, 469 KB, Original- FDB3632_F085
- Fairchild Semiconductor
- MOSFET 100V N-Channel PowerTrench MOSFET
10 Pages, 662 KB, Original- FDB3632F085
- Fairchild Semiconductor
- FDB3632F085
11 Pages, 243 KB, Original- FDB3632_NL
- Fairchild Semiconductor
- 100V N-Channel PowerTrench MOSFET
13 Pages, 592 KB, Original- FDB3652
- Fairchild Semiconductor Corporation
- 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
11 Pages, 478 KB, Original- FDB3652_F085
- Fairchild Semiconductor Corporation
- 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
20 Pages, 1369 KB, Original- FDB3652F085
- Fairchild Semiconductor
- FDB3652F085
11 Pages, 261 KB, Original- FDB3652_NL
- Fairchild Semiconductor
- N-Channel Power Trench MOSFET, 100V, 61A, 0.016 Ohms
11 Pages, 207 KB, Original- FDB3672
- Fairchild Semiconductor
- N-Channel PowerTrench MOSFET
11 Pages, 508 KB, Original- FDB3672_F085
- Fairchild Semiconductor Corporation
- 7.2 A, 100 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
17 Pages, 2507 KB, Original- FDB3672F085
- Fairchild Semiconductor
- FDB3672F085
Product Details Search Results:
Fairchildsemi.com/FDB3632
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"12A (Ta), 80A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"9 mOhm @ 80A, 10V","Datasheets":"FDB3632, FDH3632, FDP3632","FET Type":"MOSFET N-Channel, Metal Oxide","PC...
1898 Bytes - 05:36:54, 18 January 2026
Fairchildsemi.com/FDB3632_F085
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"6000pF @ 25V","Series":"PowerTrench\u00ae","Standard Package":"1","Supplier Device Package":"TO-263AB","Datasheets":"FDB3632_F085","Rds On (Max) @ Id, Vgs":"9 mOhm @ 80A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"310W","Package / Case":"TO-263-3, D\u00b2Pak ...
1738 Bytes - 05:36:54, 18 January 2026
Fairchildsemi.com/FDB3632F085
730 Bytes - 05:36:54, 18 January 2026
Fairchildsemi.com/FDB3652
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"9A (Ta), 61A (Tc)","Gate Charge (Qg) @ Vgs":"53nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"16 mOhm @ 61A, 10V","Datasheets":"FDB3652, FDP3652","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packagin...
1937 Bytes - 05:36:54, 18 January 2026
Fairchildsemi.com/FDB3652_F085
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2880pF @ 25V","Series":"PowerTrench\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"FDB3652_F085","Rds On (Max) @ Id, Vgs":"16 mOhm @ 61A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"150W","Package / Case":"TO-263-3, D\u00b2Pak (2 Lead...
1801 Bytes - 05:36:54, 18 January 2026
Fairchildsemi.com/FDB3652F085
730 Bytes - 05:36:54, 18 January 2026
Fairchildsemi.com/FDB3672
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"PowerTrench\u00ae","Standard Package":"800","Supplier Device Package":"D\u00b2PAK","Datasheets":"FDB3672","Rds On (Max) @ Id, Vgs":"28 mOhm @ 44A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"120W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mou...
1592 Bytes - 05:36:54, 18 January 2026
Fairchildsemi.com/FDB3672_F085
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1710pF @ 25V","Series":"PowerTrench\u00ae","Standard Package":"800","Supplier Device Package":"D\u00b2PAK","Datasheets":"FDB3672","Rds On (Max) @ Id, Vgs":"28 mOhm @ 44A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"120W","Package / Case":"TO-263-3, D\u00b2Pak (2 Lead...
1781 Bytes - 05:36:54, 18 January 2026
Fairchildsemi.com/FDB3672F085
730 Bytes - 05:36:54, 18 January 2026
Fairchildsemi.com/FDB3672_F085/BKN
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"59 ns","Typical Turn-Off Delay Time":"26 ns","Description":"Value","Maximum Continuous Drain Current":"7.2 A","Package":"3TO-263AB","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"11 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"28@10V mOhm","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"44 ns"}...
1401 Bytes - 05:36:54, 18 January 2026
Fairchildsemi.com/FDB3682
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"6A (Ta), 32A (Tc)","Gate Charge (Qg) @ Vgs":"28nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"36 mOhm @ 32A, 10V","Datasheets":"FDB3682, FDP3682","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packagin...
1945 Bytes - 05:36:54, 18 January 2026
Onsemi.com/FDB3632
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"310(W)","Continuous Drain Current":"12(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1465 Bytes - 05:36:54, 18 January 2026
Documentation and Support
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