FF200R06KL2
Independent IGBT Power Module

From Eupec Power Semiconductors

@I(C) (A) (Test Condition)200m
@V(CE) (V) (Test Condition)5.0
@V(CES) (V) (Test Condition)600
@V(GE) (Test Condition)15
@V(GES) (V) (Test Condition)20
Absolute Max. Power Diss. (W)800
C(iee) (Max) (F)16n
Circuits Per Package2
I(C) Abs.(A) Collector Current200
I(CES) Min. (A)1.0m
I(GES) Max. (A)500n
PackageMODULE-var
V(BR)CES (V)600
V(BR)GES (V)20
V(CE)sat Max.(V)2.5
V(GE)th Max. (V)6.0
t(f) Max. (s) Fall time.500n

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