FQB8N60CTM_WS MOSFET N-CH 600V 7.5A
From Fairchild Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Datasheets | FQB8N60C, FQI8N60C |
| Drain to Source Voltage (Vdss) | 600V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1255pF @ 25V |
| Mounting Type | Surface Mount |
| Other Names | FQB8N60CTM_WSDKR |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Packaging | Digi-Reel® |
| Power - Max | 3.13W |
| Product Photos | TO-263 |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.75A, 10V |
| Series | QFET® |
| Standard Package | 1 |
| Supplier Device Package | TO-263 (D2Pak) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
