FRK160H4 N-Channel Enhancement MOSFET - Radiation-Hardened at 1M RADs(Si).
From Harris Semiconductor
| Status | Discontinued |
| @(VDS) (V) (Test Condition) | 20 |
| Absolute Max. Power Diss. (W) | 150 |
| I(D) Abs. Drain Current (A) | 66 |
| Military | N |
| Package | TO-204AE |
| V(BR)DSS (V) | 100 |
| V(BR)GSS (V) | 20 |
| r(DS)on Max. (Ohms) | 0.04 |
