BSB014N04LX3G 36 A, 40 V, 0.0014 ohm, N-CHANNEL, Si, POWER, MOSFET
From Infineon Technologies AG
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 260 mJ |
| Case Connection | DRAIN |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 40 V |
| Drain Current-Max (ID) | 36 A |
| Drain-source On Resistance-Max | 0.0014 ohm |
| EU RoHS Compliant | Yes |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Lead Free | Yes |
| Mfr Package Description | GREEN, METAL, WDSON-2, CANPAK-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | METAL |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Power Dissipation Ambient-Max | 2.8 W |
| Pulsed Drain Current-Max (IDM) | 400 A |
| Surface Mount | Yes |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
