BSD235CH6327XT MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
From Infineon Technologies
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Factory Pack Quantity | 3000 |
| Fall Time | 3.2 ns, 1.2 ns |
| Id - Continuous Drain Current | 950 mA, - 530 mA |
| Manufacturer | Infineon |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-363-6 |
| Packaging | Reel |
| Part # Aliases | BSD235CH6327XTSA1 SP000917610 |
| Pd - Power Dissipation | 500 mW |
| Product Category | MOSFET |
| Qg - Gate Charge | - 0.4 nC, 0.34 nC |
| Rds On - Drain-Source Resistance | 350 mOhms |
| Rise Time | 5 ns, 3.6 ns |
| RoHS | Details |
| Series | BSD235 |
| Transistor Polarity | N-Channel, P-Channel |
| Typical Turn-Off Delay Time | 5.1 ns, 4.5 ns |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Breakdown Voltage | 12 V |
| Vgs th - Gate-Source Threshold Voltage | - 0.6 V, 0.7 V |
