BSM50GD120DN2E3226
IGBT Modules N-CH 1.2KV 50A

From Infineon Technologies

BrandInfineon Technologies
Collector- Emitter Voltage VCEO Max1200 V
Collector-Emitter Saturation Voltage2.5 V
ConfigurationHex
Continuous Collector Current at 25 C50 A
Factory Pack Quantity10
Gate-Emitter Leakage Current200 nA
ManufacturerInfineon
Maximum Gate Emitter Voltage20 V
Maximum Operating Temperature+ 150 C
Mounting StyleScrew
Package / CaseEconoPACK 2
Pd - Power Dissipation350 W
ProductIGBT Silicon Modules
Product CategoryIGBT Modules

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