BSZ12DN20NS3GATMA1 Trans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP
From Infineon Technologies
| Category | MOSFET |
| Channel Mode | Enhancement |
| Description | Value |
| Manufacturer | Infineon Technologies |
| Maximum Continuous Drain Current | 11.3 A |
| Maximum Drain Source Voltage | 200 V |
| Maximum Gate Source Voltage | ±20 V |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 150 °C |
| Package | 8TSDSON EP |
| RDS-on | 125@10V mOhm |
| Typical Fall Time | 3 ns |
| Typical Rise Time | 4 ns |
| Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time | 6 ns |



