FS100R07N3E4_B11 650 V, N-CHANNEL IGBT
From Infineon Technologies AG
| Status | ACTIVE |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| Collector-emitter Voltage-Max | 650 V |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Mfr Package Description | MODULE-35 |
| Number of Elements | 6 |
| Number of Terminals | 35 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Transistor Type | INSULATED GATE BIPOLAR |
| Turn-off Time-Nom (toff) | 370 ns |
| Turn-on Time-Nom (ton) | 100 ns |
