IPB025N10N3GE818XT MOSFET N-Ch 100V 180A D2PAK-6
From Infineon Technologies
| Brand | Infineon Technologies |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 28 ns |
| Id - Continuous Drain Current | 180 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | + 175 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package / Case | D2PAK-7 |
| Packaging | Reel |
| Part # Aliases | IPB025N10N3GE8187ATMA1 SP000939338 |
| Pd - Power Dissipation | 300 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 155 nC |
| Rds On - Drain-Source Resistance | 2.5 mOhms |
| Rise Time | 58 ns |
| RoHS | Details |
| Series | IPB025N10 |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 84 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
