IPD65R660CFD MOSFET N-CH 700V 6.0A TO252
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Datasheets | IPx65R660CFD |
| Drain to Source Voltage (Vdss) | 650V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 22nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 615pF @ 100V |
| Mounting Type | Surface Mount |
| Other Names | IPD65R660CFDBTMA1 SP000745024 |
| PCN Packaging | Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 62.5W |
| Product Photos | TO252-3 |
| Rds On (Max) @ Id, Vgs | 660 mOhm @ 2.1A, 10V |
| Series | CoolMOS™ |
| Standard Package | 2,500 |
| Supplier Device Package | PG-TO252-3 |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
