SI3443DVPBF
4.4 A, 20 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, MO-193AA

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)31 mJ
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min20 V
Drain Current-Max (ID)4.4 A
Drain-source On Resistance-Max0.0650 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionLEAD FREE, TSOP-6
Number of Elements1
Number of Terminals6
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max2 W
Pulsed Drain Current-Max (IDM)20 A
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionDUAL
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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