PDM1102H 80 A, 250 V, 0.033 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From Nihon Inter Electronics Corporation
| Status | ACTIVE |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min | 250 V |
| Drain Current-Max (ID) | 80 A |
| Drain-source On Resistance-Max | 0.0330 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | MODULE-7 |
| Number of Elements | 2 |
| Number of Terminals | 7 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Pulsed Drain Current-Max (IDM) | 220 A |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
