2N4398
Transistor; PNP ; Silicone Material Type; TO-3;

From NTE Electronics, Inc.

CategoryBipolar Power
ConfigurationCommon Base
Diameter22.2 mm
Dimensions22.2 Dia. x 8.89 H mm
Height8.89 mm
Maximum Base Emitter Saturation Voltage2.5 V
Maximum Collector Base Voltage40 V
Maximum Collector Emitter Saturation Voltage4 V
Maximum Collector Emitter Voltage40 V
Maximum DC Collector Current30 A
Maximum Emitter Base Voltage5 V
Maximum Operating Temperature+200 °C
Maximum Power Dissipation200 W
Minimum DC Current Gain5
Minimum Operating Temperature-65 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-65 to +200 °C
Package TypeTO-3
Pin Count3
Transistor MaterialSi
Transistor TypePNP

External links