BLC9G20LS-120V Trans RF FET N-CH 65V 6-Pin DFM
From NXP SEMICONDUCTORS
| Channel Mode | Enhancement |
| Channel Type | N |
| Drain Efficiency (Typ) | 31(%) |
| Drain Source Voltage (Max) | 65(V) |
| Forward Transconductance (Typ) | 4.3(S) |
| Frequency (Max) | 1995(MHz) |
| Frequency (Min) | 1805(MHz) |
| Mode Of Operation | 2-Carrier W-CDMA |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -65C to 225C |
| Output Power (Max) | 30(TYP) |
| Package Type | DFM |
| Pin Count | 6 |
| Power Gain (Typ)@Vds | 19.2@28V(dB) |
| Rad Hardened | No |
| Screening Level | Military |
