BLF245
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

From NXP

StatusEOL/LIFEBUY
Case ConnectionISOLATED
Channel TypeN-CHANNEL
China RoHS CompliantYes
ConfigurationSINGLE
DS Breakdown Voltage-Min65 V
Drain Current-Max (ID)6 A
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandVERY HIGH FREQUENCY BAND
Lead FreeYes
Mfr Package DescriptionSOT-123A, CERAMIC PACKAGE-4
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleFLANGE MOUNT
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionRADIAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeRF POWER

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