BLF7G27LS-100
S BAND, Si, N-CHANNEL, RF POWER, MOSFET

From NXP

StatusACTIVE
Case ConnectionSOURCE
Channel TypeN-CHANNEL
China RoHS CompliantYes
ConfigurationSINGLE
DS Breakdown Voltage-Min65 V
Drain Current-Max (ID)28 A
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandS BAND
Lead FreeYes
Mfr Package DescriptionROHS COMPLIANT, CERAMIC PACKAGE-2
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleFLATPACK
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeRF POWER

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