D60T404010
Si NPN Power BJT

From Powerex Power Semiconductors

@I(B) (A) (Test Condition)6.0
@I(C) (A) (Test Condition)40
@V(CBO) (V) (Test Condition)450
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)885
I(CBO) Max. (A)1.0m
MilitaryN
PackageStud
V(BR)CBO (V)450
V(BR)CEO (V)400
V(CE)sat Max.(V)1.25
h(FE) Min. Static Current Gain10
t(d) Max. (s) Delay time.110n
t(f) Max. (s) Fall time.500n
t(r) Max. (s) Rise time1.0u
t(s) Max. (s) Storage time.3.0u

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