2SC5509-T2 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From Renesas Electronics
| Status | ACTIVE |
| Collector Current-Max (IC) | 0.1000 A |
| Collector-base Capacitance-Max | 0.7500 pF |
| Collector-emitter Voltage-Max | 3.3 V |
| Configuration | SINGLE |
| Highest Frequency Band | L BAND |
| Mfr Package Description | THIN, SUPER MINIMOLD, M04, 4 PIN |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 0.1900 W |
| Surface Mount | Yes |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Polarity | NPN |
| Transistor Type | RF SMALL SIGNAL |
| Transition Frequency-Nom (fT) | 15000 MHz |
