RN2907FE,LF(CB TRANS 2PNP PREBIAS 0.1W ES6
From Toshiba Semiconductor and Storage
| Category | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Datasheets | RN2907FE-09FE - |
| Family | Transistors (BJT) - Arrays, Pre-Biased |
| Frequency - Transition | 200MHz |
| Mounting Type | Surface Mount |
| Online Catalog | PNP Pre-Biased Transistor Arrays |
| Other Names | RN2907FE(T5L,F,T) RN2907FE(T5LFT)TR RN2907FE(T5LFT)TR-ND RN2907FE,LF(CT RN2907FELF(CBTR RN2907FELF(CTTR RN2907FELF(CTTR-ND |
| Package / Case | SOT-563, SOT-666 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 100mW |
| Product Photos | SOT-563 |
| Resistor - Base (R1) (Ohms) | 10k |
| Resistor - Emitter Base (R2) (Ohms) | 47k |
| Series | - |
| Standard Package | 4,000 |
| Supplier Device Package | ES6 |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
