IRFBC40APBF
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 1.2 Ohms; ID 6.2A; TO-220AB; PD 125W; VGS +/-30

From Vishay PCS

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions10.51 x 4.65 x 15.49 mm
Forward Diode Voltage1.5 V
Forward Transconductance3.4 S
Height15.49 mm
Length10.51 mm
Maximum Continuous Drain Current6.2 A
Maximum Drain Source Resistance1.2 Ω
Maximum Drain Source Voltage600 V
Maximum Gate Source Voltage±30 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation125 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeTO-220AB
Pin Count3
Typical Gate Charge @ VgsMaximum of 42 nC @ 10 V
Typical Input Capacitance @ Vds1036 pF @ 25 V
Typical Turn On Delay Time13 ns
Typical TurnOff Delay Time31 ns
Width4.65 mm

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