0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
-6 BD178-10 BD178-16 BD178-6 BD179-10 BD179-16 BD179-6 BD180-10 BD180-16 BD180-6 BD233 BD234 BD235 BD236 BD237 BD238 BD239 BD239A BD239B BD239C BD240 BD240A Industry BD240B BD240C BD241 BD241A BD241B BD241C BD242 BD242A BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD244A BD244B BD244C BD375-10 BD375-16 BD375-25 BD375-6 BD376-10 BD376-16 BD376-25 BD376-6 BD377-10 BD377-16 BD377-25 BD377-6 BD378-10 BD378-16 BD378-25 BD378-6 BD379-10 BD379-16 BD379-25 BD379-6 BD380-10 BD380-16 BD380-25 BD380-6 BD433 BD434 BD435 BD436 BD437 BD438 BD439 BD440 BD441 BD442 BD533 BD534 BD535 BD536 BD537 BD538 BD675A BD676 Fairchild Closest Equivalent Industry BD240B BD240C BD241 BD241A BD241B BD241C BD242 BD242A BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD244A BD244B BD244C BD375-10 BD375-16 BD375-25 BD375-6 BD376-10 BD376-16 BD376-25 BD376-6 BD377-10 BD377-16 BD377-25 BD377-6 BD378-10 BD378-16 BD378-25 BD378-6 BD379-10 BD379-16 BD379-25 BD379-6 BD380-10 BD380-16 BD380-25 BD380-6 BD433 BD434 BD43
O-220AB ON Semiconductor Selector Guide - Bipolar Transistors DISCRETE TRANSISTORS (continued) ICCont Amps Max VCEO(sus) Volts Min 6.0 40 NPN 15/75 3.0 3.0 65 3.0 3.0 65 80 TIP41B TIP42B 15/75 3.0 3.0 65 BD244B 15 min 3.0 3.0 65 BD243C BD244C 15 min 3.0 3.0 65 TIP41C TIP42C 15/75 3.0 3.0 65 2N6288 2N6111 30/150 3.0 4.0 40 2N6109 30/150 2.5 4.0 40 2N6107 30/150 2.0 4.0 40 30 min 1.5 10 60 30 70 2N6292 200 BU406 120 MJE15028 MJE15029 20 min 4.0 30 50 150 MJE15030 MJE15031 20 min 4.0 30 50 250 MJE15032 MJE15033 10 min 2.0 30 50 300 MJE5850 15 min 2.0 30 typ 80 350 MJE5851 15 min 2.0 30 typ 80 400 MJE5852 15 min 2.0 30 typ 80 MJE13007 5/30 5.0 14 typ 80 MJE18008 16/34 1.0 13 typ 125 D44H8 D45H8 40 min 4.0 3.0 50 MJE3055T MJE2955T 20/70 4.0 3.0 75 BD809 BD810 15 min 4.0 1.5 90 D44H11 D45H11 40 min 4.0 50 typ 50 BUH100 6.0 min 10 23 typ 100 90 BUV26 12 min 12
nt to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Base Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP *Collector Current (Pulse) 10 A IB Base Current PC Collector Dissipation (TC=25C) TJ TSTG 2 A 65 W Junction Temperature 150 C Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C ICEO Collector Cut-off Current ICES Collector Cut-off Current : BD243/243A : BD243B/243C : BD243 : BD243A : BD243B : BD243C Test Condition IC=30mA, IB=0 Min. T
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS * High Current Gain Bandwidth Product * These Devices are Pb-Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C Symbol Value Unit VCEO 80 100 VCB Emitter-Base Voltage VEB 5.0 Vdc IC 6 Adc ICM 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C -65 to +150 C Collector Current - Peak Operating and Storage Junction Temperature Range NPN COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE Vdc 80 100 TJ, Tstg PNP Vdc Collector-Base Voltage BD243B, BD244B BD243C, BD244C Collector Current - Continuous www.onsemi.com EMITTER 3 4 TO-220 CASE 221A STYLE 1 1 Stresses exceeding those listed in t
general-purpose switching and amplifier applications. F Collector-Emitter Saturation VoltageVCE=1.5Vdc(Max)@IC=6Adc F Collector-Emitter Sustaining VoltageVCEO(sus)=60/80/100Vdc(Min) BD243A/B/C F TO-220 Package MAXIMUM RATINGS Rating Symbol BD243A BD243B BD243C Unit Collector- Emitter Voltage V CEO 60 80 100 Vdc Collector - Base Voltage Emitter Base Voltage Collector Current - Continuos Peak Base Current V CB V EB IC 60 80 5 6 10 2 100 Vdc Vdc Adc Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage junction Temperature Range THERMAL CHARACTERISTICS Characteristic IB PD Adc 65 0.52 -65 to +150 Tj,Tstg Symbol Max. 1.92 Thermal resistance junction to case R thjc Watts W/C C Unit C/W ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic C unless otherwise noted ] Symbol Min Typ Max Unit * OFF CHARACTERISTICS : Collector-Emitter Sustaining Voltage(1) VCEO(sus) [ Ic =30 mAdc, IB = 0 ] BD243A BD243B BD243C Collector Cutoff Current ICE0
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
BD243C Unit 100 V 6 A 65 W Tj 150 C VCE (Sat) 1.5 Collector-Base Voltage (Open Emitter) VCBO Collector Emitter Voltage (Open Base) VCEO Collector Current Total Power Dissipation upto TC = 25C Junction Temperature Collector Current Saturation Voltage IC = 6A, IB = 1A DC Current Gain IC = 0.3A; VCE = 4V IC Ptot hFE Max. V Min. 30 Ratings (at Ta = 25C unless otherwise specified) Limiting Values Collector-Base Voltage (Open Emitter) VCBO Collector Emitter Voltage (Open Base) VCEO Emitter-Base Voltage (Open Collector) VEBO Collector Current Collector Current (Peak) Base Current IC 100 5 6 Max. 10 IB 2 Ptot 65 Junction Temperature Tj 150 Storage Temperature Tstg -65 to +150 Total Power Dissipation upto TC = 25C V A W C www.element14.com www.farnell.com www.newark.com Page <1> 13/12/12 V1.0 High Power Bipolar Transistor Absolute Maximum Ratings: Characteristic Symbol BD243C Unit 1.92 C/W 0.7 0.4 mA Thermal Resistance From Junction t
BD243C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) BD243 45 BD243A 60 BD243B 80 BD243C 100 TYP MAX V VCE = 55 V VBE = 0 BD243 0.4 Collector-emitter VCE = 70 V VBE = 0 BD243A 0.4 cut-off current VCE = 90 V VBE = 0 BD243B 0.4 VCE = 115 V VBE = 0 BD243C 0.4 Collector cut-off VCE = 30 V IB = 0 BD243/243A 0.7 current VCE = 60 V IB = 0 BD243B/243C 0.7 VEB = 5V IC = 0 Forward current VCE = 4V IC = 0.3 A transfer ratio VCE = 4V IC = 3A IB = 1A IC = 6A VCE = 4V IC = 6A Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio UNIT mA mA 1 mA (see Notes 5 and 6) 1.5 V (see Notes 5 and 6) 2 V 30 (see Notes
nt to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Base Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP *Collector Current (Pulse) 10 A IB Base Current PC Collector Dissipation (TC=25C) TJ TSTG 2 A 65 W Junction Temperature 150 C Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C ICEO Collector Cut-off Current ICES Collector Cut-off Current : BD243/243A : BD243B/243C : BD243 : BD243A : BD243B : BD243C Test Condition IC=30mA, IB=0 Min. T
3/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-220 * Complement to BD244, BD244A, BD244B and BD244C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C Collector Emitter Voltage : BD243 : BD243A : BD243B : BD243C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PC TJ T STG Rating Unit 45 60 80 100 45 60 80 100 5 6 10 2 65 150 -65 ~ 150 V V V V V V V V V A A A W 1.Base 2.Collector 3.Emitter C C ELECTRICAL CHARACTERISTICS (TC=25C) Characteristic * Collector Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C Collector Cutoff Current : BD243/243A : BD243B/243C Collector Cutoff Current : BD243 : BD243A : BD243B : BD243C Emitter Cutoff Current *DC Current Gain *Collector Emitter Saturation Voltage *B
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
erred devices. http://onsemi.com 9 Plastic TO-220AB (continued) Device Type @ IC Amp 15/75 3.0 0.4 typ 0.15 typ 3.0 3.0 65 742 TIP42B 15/75 3.0 0.4 typ 0.15 typ 3.0 3.0 65 742 BD244B 15 min 3.0 0.4 typ 0.15 typ 3.0 3.0 65 162 BD243C BD244C 15 min 3.0 0.4 typ 0.15 typ 3.0 3.0 65 162 TIP41C TIP42C 15/75 3.0 0.4 typ 0.15 typ 3.0 3.0 65 742 6.0 60 TIP41A TIP42A 80 TIP41B BD243B 7.0 NPN PNP 400/700 BUL146 14/34 0.5 1.75 (Note 10.) 0.15 (Note 10.) 3.0 14 typ 100 450/1000 MJE18006 14/34 0.5 3.2 (Note 10.) 0.13 (Note 10.) 3.0 14 typ 100 30 2N6288 50 8.0 @ IC Amp PD (Case) Watts @ 25C hFE Min/Max VCEO(sus) Volts Min (Note 11.) tf s Max fT MHz Min ts s Max ICCont Amps Max 100 Resistive Switching Page 263 531 2N6111 30/150 3.0 0.4 typ 0.15 typ 3.0 4.0 40 107 2N6109 30/150 2.5 0.4 typ 0.15 typ 3.0 4.0 40 107 2N6107 30/150 2.0 0.4 typ 0.15 typ 3.0 4.0 40 107 70 2N6292 150 BU407 30 min
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
BD243C BD244C Complementary power transistors Features . Complementary NPN-PNP devices Applications ) s ( ct Power linear and switching u d o Description 1 2 3 r P e TO-220 The device is manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD244C. t e l o Figure 1. ) (s Internal schematic diagram s b O t c u d o r P e t e l o s b O Table 1. Device summary Order code Marking Package Packaging BD243C BD244C BD243C BD244C TO-220 Tube July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 BD243C BD244C Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Value Parameter BD243C (NPN) Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitte-base voltage (IC = 0) 5 V Collector current 6 Collector peak cur
in general purpose amplifier and switching applications. * Collector - Emitter Saturation Voltage -- VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc * Collector Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min) -- BD243B, BD244B VCEO(sus) = 100 Vdc (Min) -- BD243C, BD244C * High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIIII
BD243C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BD244 : BD244A : BD244B : BD244C - 45 - 60 - 80 - 100 V V V V Collector-Emitter Voltage : BD244 : BD244A : BD244B : BD244C - 45 - 60 - 80 - 100 V V V V Collector-Base Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -6 A - 10 A ICP *Collector Current (Pulse) IB Base Current -2 A PC Collector Dissipation (TC=25C) 65 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD244 : BD244A : BD244B : BD244C ICEO Collector Cut-off Current ICES Collector Cut-off Current : BD244/244A : BD244B/244C : BD244 : BD244A : BD244B : BD244C Test Condition Min. IC = - 30mA, IB = 0 - 45 - 60 - 80 - 100 Typ. Max. Units V V
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
BD243C * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B * Collector - Emitter Saturation Voltage -- BD244C * VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc * Collector Emitter Sustaining Voltage -- * * VCEO(sus) = 80 Vdc (Min) -- BD243B, BD244B = 100 Vdc (Min) -- BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package *ON Semiconductor Preferred Device 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIII
BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. * Collector - Emitter Saturation Voltage -- VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc * Collector Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min) -- BD243B, BD244B VCEO(sus) = 100 Vdc (Min) -- BD243C, BD244C * High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package *Motorola Preferred Device 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80 - 100 VOLTS 65 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
BD243C BD244C Complementary power transistors Features . Complementary NPN-PNP devices Applications Power linear and switching Description 1 The device is manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD244C. Table 1. 2 3 TO-220 Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging BD243C BD244C BD243C BD244C TO-220 Tube July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 BD243C BD244C Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value BD243C (NPN) Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitte-base voltage (IC = 0) 5 V Collector current 6 A Collector peak current (tP < 5ms) 10 A Base current 2 A PTOT Total dissipation at Tc = 25
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
BD243C BD244B/BD244C (R) COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD243B BD243C PNP BD244B BD244C 100 V 100 V V CBO Collector-Base Voltage (I E = 0) 80 V CEO Collector-Emitter Voltage (I B = 0) 80 V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 6 A 10 A 2 A IC I CM IB P tot T stg Tj Collector Peak Current Base Current o Total Dissipation at T c 25 C Storage Temperature Max. Operating Junction Temperature 65 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. September 1999 1/4 BD243B /
nt to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Base Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP *Collector Current (Pulse) 10 A IB Base Current PC Collector Dissipation (TC=25C) TJ TSTG 2 A 65 W Junction Temperature 150 C Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C ICEO Collector Cut-off Current ICES Collector Cut-off Current : BD243/243A : BD243B/243C : BD243 : BD243A : BD243B : BD243C Test Condition IC=30mA, IB=0 Min. T
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
BD243C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD244 Series 65 W at 25C Case Temperature 6 A Continuous Collector Current B 1 10 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL Collector-emitter voltage (RBE = 100 ) BD243B Collector-emitter voltage (IC = 30 mA) VCER 115 45 V CEO Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. 60 80 V V 100 BD243C Continuous collector current 90
BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS * High Current Gain Bandwidth Product * These Devices are Pb-Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C Symbol Value Unit VCEO 80 100 VCB Emitter-Base Voltage VEB 5.0 Vdc IC 6 Adc ICM 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C -65 to +150 C Collector Current - Peak Operating and Storage Junction Temperature Range NPN COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE Vdc 80 100 TJ, Tstg PNP Vdc Collector-Base Voltage BD243B, BD244B BD243C, BD244C Collector Current - Continuous www.onsemi.com EMITTER 3 4 TO-220 CASE 221A STYLE 1 1 Stresses exceeding those listed in t
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
.164 .164 .181 .243 mouser.com/fairchild-semiconductor MOUSER STOCK NO. Mfr. Mfr. Part No. NPN (Cont.) 512-MJD44H11TM 512-KSH44H11TF 512-KSH44H11TM 512-KSE44H11 512-BSS63 512-TIP30C 512-KSH31CTF 512-MJD32CTF 512-TIP32C 512-TIP31C 512-TIP31CTU 512-BD243C 512-BD243C 512-TIP42C 512-FJV992PMTF 512-FJV992FMTF 512-KSA992FBU * 512-KSA992FTA * 512-KSC1845FTA 512-FJV1845FMTF 512-KSA916YTA 512-KST5550MTF 512-MMBT5550 512-MMBT5401 512-KSC2073TU 512-2N5551BU * 512-2N5551TA * 512-2N5551TF * 512-2N5551TFR 512-FMB5551 512-KST5551MTF 512-MMBT5551 512-KSC2383OTA 512-KSA1013YBU 512-KSC2383YTA 512-KSA1013YTA 512-KSC2690AYSTU 512-KST43MTF 512-BU406 512-BU406TU 512-TIP47 512-MMBTA42 512-MPSA42 512-PZTA42 * 512-KSP42TA 512-KST42MTF 512-TIP48 512-2N6517BU * 512-2N6517TA 512-FJT44TF * 512-KSP44TA * 512-KSP44TF 512-2N6517CTA * 512-TIP50 PNP 512-BD244CTU 512-MMBT3640 512-MMBT5771 * 512-SS9012GTA 512-BCP69 512-MMBT4126 512-BC80840MTF 512-SS8550BBU 512-SS8550CBU * 512-SS8550DTA 512-
BD243C * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B * Collector - Emitter Saturation Voltage -- BD244C * VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc * Collector Emitter Sustaining Voltage -- * * VCEO(sus) = 80 Vdc (Min) -- BD243B, BD244B = 100 Vdc (Min) -- BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package *ON Semiconductor Preferred Device 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIII
nt to BD244, BD244A, BD244B and BD244C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V Collector-Base Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 6 A ICP *Collector Current (Pulse) 10 A IB Base Current PC Collector Dissipation (TC=25C) TJ TSTG 2 A 65 W Junction Temperature 150 C Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C ICEO Collector Cut-off Current ICES Collector Cut-off Current : BD243/243A : BD243B/243C : BD243 : BD243A : BD243B : BD243C Test Condition IC=30mA, IB=0 Min. T
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
BD243C NPN SILICON POWER TRANSISTORS Copyright (c) 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD244 Series TO-220 PACKAGE (TOP VIEW) 65 W at 25C Case Temperature 6 A Continuous Collector Current B 1 10 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL BD243 Collector-emitter voltage (RBE = 100 ) Collector-emitter voltage (IC = 30 mA) BD243A BD243B VALUE VCER 70 90 BD243C 115 BD243 45 BD243A BD243B UNIT 55 VCEO BD243C 60 80 V V 100 V EBO 5 V IC 6 A ICM 10 A IB 3 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 65 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 2 W 1/2LIC 2 62.5 mJ Tj -65 to +150
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
BD243C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD244 Series 65 W at 25C Case Temperature 6 A Continuous Collector Current B 1 10 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL Collector-emitter voltage (RBE = 100 ) BD243B Collector-emitter voltage (IC = 30 mA) VCER 115 45 V CEO Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. 60 80 V V 100 BD243C Continuous collector current 90
BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS * Collector - Emitter Saturation Voltage - VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc * Collector Emitter Sustaining Voltage - * * http://onsemi.com VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage BD243B, BD244B BD243C, BD244C Emitter-Base Voltage VCB Value Unit TO-220AB CASE 221A-09 STYLE 1 Vdc 80 100 1 Vdc 80 100 2 3 VEB 5.0 Vdc IC 6 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 65 0.52 W W/C B
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
BD243C* (NPN) BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 65 WATTS * Collector - Emitter Saturation Voltage - * * * http://onsemi.com VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage Value Unit 1 VCB BD243B, BD244B BD243C, BD244C Emitter-Base Voltage Vdc 5.0 Vdc IC 6 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25C PD 65 0.52 W W/_C TJ, Tst
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
0 MJE16002 5 min 5 3 0.3 3 80 450/850 MJE16004 7 min 5 2.7 0.35 3 80 450/1000 MJE18004 14/34 0.3 1.7 0.15 1.0 13 75 18/35 0.5 2.75(3) 0.2(3) 2 12 75 MJE18204 80 BD243B BD244B 15 min 3 0.4 typ 0.15 typ 3 3 65 100 BD243C BD244C 15 min 3 0.4 typ 0.15 typ 3 3 65 TIP41C TIP42C 15/75 3 0.4 typ 0.15 typ 3 3 65 250/550 MJE16204 5 min 6 1.5(2) 0.15(2) 1 10 80 400/700 BUL146 14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100 0.5 3.2(3) 0.13(3) 3 14 typ 100 450/1000 7 PNP ts s Max MJE800 (2) 550/1200 6 NPN Resistive Switching 30 MJE18006 2N6288 50 14/34 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40 0.4 typ 0.15 typ 3 4 40 3 65 70 2N6292 2N6107 30/150 2 100 BD801 BD802 15 min 3 150 BU407 30 min 1.5 0.75 5 10 60 200 BU406 30 min 1.5 0.75 5 10 60 450 BU522B (2) 250 min 2.5 7.5 75 (1)|h | @ 1 MHz FE (2)Darlington (3)Switching tests perform
846BLT1 BC846BSMD BC847BSMD BC848B BC848BLT1SMD BC848BSMD BC857B BC857BLT1SMD BC857BSMD BC857C BC858B BC858C BC858SMD BC875 BCP53 BCP5616/T3 BCR400R BCX19 BD135 BD136 BD13810 BD13816 BD1386 BD139 BD140 BD14010 BD14016 BD201 BD234 BD236 BD237 BD241C BD242C BD243C 60 1500 1500 1500 30 1,00 3,50 5,00 6,00 3,00 0,90 50,00 50,00 50,00 0,75 f, h21,min 150,00 3,00 3,00 3,00 200,00 60 8 8 8 140 SC51 TO3 TO3 TO3 TO92 60 3,00 30,00 3,00 100 TO220 40 40 1500 40 40 30 3,00 3,00 5,00 5,00 5,00 2,00 10,00 10,00 50,00 0,75 1,00 10,00 90,00 90,00 160 100 150,00 150,00 100,00 180 180 35 TO126 TO126 TO3 TO92 SC51 SOT223 NPN Si NPN+Di NPN+Di NPN+Di NPN Si NPN Si NPN Si NPN Si NPN Si NPN Si NPN Si/R NPN Si NPN Si NPN Si 50 0,20 0,60 150,00 240 TO18 NPN Si NPN Si 60 60 0,10 0,10 0,35 0,35 150,00 150,00 125 80 TO92 TO92 NPN Si PNP Si PNP Si PNP 45 45 45 25 50 50 50 25 30 25 25 25 40 80 50 50 50 30 30 30 50 65 50 50 0,80 0,50 0,50 0,50 0,80 0,80 0,80 0,50 0,80 0,50 1,00 1,00 1,00 0
Retrieved from "https://datasheet.company/index.php/Special:FullText"