RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 2 3 APPLICATION +0.05 R1.6+/-0.15 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. 0.1 -0.01 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in HF Band mobile radio sets. RD100HHF1-101 9.6+/-0.3 High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 24.0+/-0.6 FEATURES 10.0+/-0.3 4-C2 1 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V
RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 High power and High Gain: 9.6+/-0.3 24.0+/-0.6 FEATURES 2 Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz 10.0+/-0.3 4-C2 1 +0.05 High Efficiency: 60%typ.on HF Band 3 0.1 -0.01 R1.6+/-0.15 4.5+/-0.7 5.0+/-0.3 6.2+/-0.7 18.5+/-0.3 APPLICATION 3.3+/-0.2 For output stage of high power amplifiers in HF Band mobile radio sets. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm RoHS COMPLIANT RD100HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 50 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25C 176.5 W Pin Input power Zg=Zl=50 12.5 W ID Drain current -
RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 2 3 APPLICATION +0.05 R1.6+/-0.15 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. 0.1 -0.01 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in HF Band mobile radio sets. RD100HHF1-101 9.6+/-0.3 High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 24.0+/-0.6 FEATURES 10.0+/-0.3 4-C2 1 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V
RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 2 3 APPLICATION 9.6+/-0.3 High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 24.0+/-0.6 FEATURES 10.0+/-0.3 4-C2 1 +0.05 R1.6+/-0.15 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in HF Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD100HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. 0.1 -0.01 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V
RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 2 9.6+/-0.3 *High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz *High Efficiency: 60%typ.on HF Band 24.0+/-0.6 FEATURES 10.0+/-0.3 4-C2 1 +0.05 0.1 -0.01 R1.6+/-0.15 3 APPLICATION 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in HF Band mobile radio sets. 6.2+/-0.7 18.5+/-0.3 3.3+/-0.2 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 50 +/-20 176.5 12.5 25 175 -40 to +175 0.85 UNIT V V W W A C C C/W Note 1: Above parameters are g
H2 H2 H2 H2 G1 G1 G1 F1 F1 I3 J2 G3 F1 F1 C2 C2 D1 D1 A2 A A A A I4 G1 I2 E3 FT-450 Technical Supplement PA Unit Circuit Diagram FT-450 Technical Supplement PA-1 PA Unit Note PA-2 PA Unit A B C D E F G H I J 1 RD06HHF1-01 (Q 5001) RD16HHF1 (Q 5006, 5007) RD100HHF1-101 (Q 5009, 5010) 2 3 PQ09TZ1U (Q 5401) TA75S01F(SA) (Q 5400) 4 DTC124GUA (K25) (Q 5402) DTC114TE (04) (Q 5403, 5405) 5 PDTC144EE (08) (Q 5404) DTD123TK (Q 5406) (Lot.2-) DTD123TK (Q 5408) (Lot.3-) DTD123YK (F62) (Q 5406, 5408) 6 7 TB6593FNG (Q 5409) DAN202U (N) (D 5018, 5019) 8 Parts Layout (Side A) FT-450 Technical Supplement PA-3 PA Unit a b c d e f g h i j 1 2 3 4 5 6 7 8 Parts Layout (Side B) PA-4 PA Unit Parts List REF C 5012 C 5013 C 5014 C 5015 C 5032 C 5034 C 5035 C 5036 C 5037 C 5038 C 5040 C 5049 C 5050 C 5051 C 5052 C 5053 C 5054 C 5055 C 5056 C 5057 C 5067 C 5069 C 5070 C 5072 C 5079 C 5080 C 5082 C 5083 C 5084 C 5085 C 5086 C 5087 C 5089 C 5090 C 5104 C 5105 C 5106 C 5109 C 5120 C 5121 C 5123 C 5124 C 5125 C 5126 C 5127
1- A A A A A F2 G1 B1 D1 G2 VX-1400 Series Service Manual PA Unit Circuit Diagram VX-1400 Series Service Manual 47 PA Unit Note 48 VX-1400 Series Service Manual PA Unit Parts Layout (Side A) A B C D E F G H I J 1 RD06HHF1-01 (Q5002) RD16HHF1 (Q5007, 5008) RD100HHF1-101 (Q5011, 5012) 2 DTD123YK (F62) (Q 5001, 5003) HA178L09UA (Q5004) 3 4 TA75S01F(SA) (Q5005) UMD5N (Q5006) 5 DTC124GUA (K25) (Q 5009) DTC114TE (04) (Q5010) 6 DAN202U (N) (D5010, 5011) 7 8 VX-1400 Series Service Manual 49 PA Unit Parts Layout (Side B) a b c d e f g h i j 1 2 3 4 5 6 7 8 50 VX-1400 Series Service Manual PA Unit Parts List REF. C 5002 C 5003 C 5004 C 5005 C 5008 C 5010 C 5012 C 5013 C 5015 C 5016 C 5018 C 5019 C 5020 C 5021 C 5022 C 5023 C 5024 C 5025 C 5026 C 5027 C 5028 C 5029 C 5030 C 5031 C 5032 C 5033 C 5034 C 5036 C 5037 C 5039 C 5041 C 5042 C 5043 C 5044 C 5045 C 5046 C 5048 C 5049 C 5050 C 5052 C 5053 C 5055 C 5056 C 5057 C 5058 C 5059 C 5061 C 5063 C 5064 C 5065 C 5066 C 5067 C 5068 C 5069 C 5070 C 5071 C 5072 D
Si MOS FET (Discrete) Output Power (W) Select Map 100 50 RD12MVP1 RD12MVS1 10 RD07MVS2 RD07MVS1 5 RD02MUS1/RD02MUS2 RD09MUP2 RD05MMP1 RD01MUS2 RD01MUS1 10 30 135 175 300 520 700 900MHz 1GHz Frequency 12.5V operation High Output Power Si MOS FET (Discrete) RD100HHF1 100 Output Power (W) Po RD70HHF1 RD70HVF1 RD60HUF1 RD45HMF1 50 RD30HVF1 RD20HMF1 RD16HHF1 10 RD15HVF1 RD06HHF1 RD06HVF1 RD00HHS1 RD00HVS1 10 30 RD30HUF1 135 175 300 520 Frequency 1 700 900MHz 1GHz 7.2V operation High Output Power Si MOS FET Module 60 Output Power (W) 50 40 30 20 RA07M0608M RA03M3540/4043/4547MD RA07M2127M RA07M1317M 10 RA07M3340M/4047M/4452M RA02M8087MD RA03M8087M RA07M3843M 68 88 135 175 218 270 330 RA03M9595M(8V) 520 806 870 Frequency RA03M8894M 889 941MHz : Under Development 9.6V operation High Output Power Si MOS FET Module 60 Output Power (W) 50 40 30 20 RA08N1317M 10 68 88 135 RA07N3340M/4047M/4452M 175 218 270 330 520 806 870 889 941MHz Frequency 12.5V operation High Output Power Si MOS FET Module RA60H4047M1/44
27,8 25,1 26 26 24,1 27,8 30,8 29 25,4 27,8 21,5 21,5 21,5 21,5 25,7 25,7 25,7 25,4 25,4 25,4 24,1 24,1 24,1 27,8 27,8 27,8 29,5 29,5 27,8 29,5 18,6 18,6 26 26 29.5 29.0 37,8 18,1 41,1 19,5 1 200 1 200 H11S H2S H11S H2S RD00HHF1 RD06HHF1 RD16HHF1 RD70HHF1 RD100HHF1 RD00HVS1 RD01MUS1 RD02MUS1 RD07MVS1 RD15HVF1 RD30HVF1 RD30HUF1 RD70HVF1 RD60HUF1 RD20HMF1 RD45HMF1 , F M . , . , , % Gp dB . , 30 30 30 30 30 175 520 175 520 175 520 175 520 175 520 175 520 520 900 900 12,5 12,5 12,5 12,5 12,5 12,5 7,2 7,2 7,2 12,5 12,5 12,5 12,5 12,5 12,5 12,5 0,3 6 16 70 100 0,5 0,8 2 2 7 7 15 15 30 30 70 50 60 20 45 55 55 55 55 55 50 50 55 50 55 50 55 50 55 50 55 50 50 50 45 18,7 16 16 13 11,5 20 14,3 16 13,7 10,0 14,0 7,0 14,8 10 10,7 7,0 7,8 8,2 4,8 0,004 0,15 0,4 3,5 7 0,005 0,03 0,05 0,05 0,3 0,7 0,6 3,0 1 3 6 10 10 3 15 SOT89 TO220 TO220 T40S T40S SOT89 SOT89 SLP SLP TO220 T31S T31S T40S T40S T31S T40S (812) 4494000, 4494005, 4494006 npo@symmetron.ru http://store.iiic.cc/ www.symmetron.ru . 2005 . 83
control system developed for use on the TS-990S, the TS-590SG is able to send out properly-controlled signals even at the initial rise of the SSB transmission signal. 2.1.3 FET Final Circuit The final amplifier is a push-pull amplifier using two pieces of RD100HHF1 MOSFET from Mitsubishi Electric Semiconductor (Pch 176.5 W). The drive amplifier uses an RD16HHF1 MOSFET and the pre-drive amplifier uses an RD06HHF1 MOSFET, despite being 13.8 V final circuits, the amplifiers are able to amplify the signal reasonably in a stable and continuous manner with low distortion. Figure 2-1 shows the graph of IMD characteristics and Figure 2-2 shows the graph of harmonic spurious characteristics. Superior distortion characteristics and clean signals are acquired in this way. 13 02 TRANSMISSION TS-590SG 14.175 MHz 100 W P.E.P. TX IMD Figure 2-1 Transmit IMD Characteristics TS-590SG 14.175 MHz 100 W TX Spurious Emission Figure 2-2 Transmit Spurious Characteristics 14 TRANSMISSION 02 2.2 High-speed Relay-controll
27,8 25,1 26 26 24,1 27,8 30,8 29 25,4 27,8 21,5 21,5 21,5 21,5 25,7 25,7 25,7 25,4 25,4 25,4 24,1 24,1 24,1 27,8 27,8 27,8 29,5 29,5 27,8 29,5 18,6 18,6 26 26 29.5 29.0 37,8 18,1 41,1 19,5 1 200 1 200 H11S H2S H11S H2S RD00HHF1 RD06HHF1 RD16HHF1 RD70HHF1 RD100HHF1 RD00HVS1 RD01MUS1 RD02MUS1 RD07MVS1 RD15HVF1 RD30HVF1 RD30HUF1 RD70HVF1 RD60HUF1 RD20HMF1 RD45HMF1 , F M . , . , , % Gp dB . , 30 30 30 30 30 175 520 175 520 175 520 175 520 175 520 175 520 520 900 900 12,5 12,5 12,5 12,5 12,5 12,5 7,2 7,2 7,2 12,5 12,5 12,5 12,5 12,5 12,5 12,5 0,3 6 16 70 100 0,5 0,8 2 2 7 7 15 15 30 30 70 50 60 20 45 55 55 55 55 55 50 50 55 50 55 50 55 50 55 50 55 50 50 50 45 18,7 16 16 13 11,5 20 14,3 16 13,7 10,0 14,0 7,0 14,8 10 10,7 7,0 7,8 8,2 4,8 0,004 0,15 0,4 3,5 7 0,005 0,03 0,05 0,05 0,3 0,7 0,6 3,0 1 3 6 10 10 3 15 SOT89 TO220 TO220 T40S T40S SOT89 SOT89 SLP SLP TO220 T31S T31S T40S T40S T31S T40S (812) 4494000, 4494005, 4494006 npo@symmetron.ru www.symmetron.ru . 2005 . 83
27,8 25,1 26 26 24,1 27,8 30,8 29 25,4 27,8 21,5 21,5 21,5 21,5 25,7 25,7 25,7 25,4 25,4 25,4 24,1 24,1 24,1 27,8 27,8 27,8 29,5 29,5 27,8 29,5 18,6 18,6 26 26 29.5 29.0 37,8 18,1 41,1 19,5 1 200 1 200 H11S H2S H11S H2S RD00HHF1 RD06HHF1 RD16HHF1 RD70HHF1 RD100HHF1 RD00HVS1 RD01MUS1 RD02MUS1 RD07MVS1 RD15HVF1 RD30HVF1 RD30HUF1 RD70HVF1 RD60HUF1 RD20HMF1 RD45HMF1 , F M . , . , , % Gp dB . , 30 30 30 30 30 175 520 175 520 175 520 175 520 175 520 175 520 520 900 900 12,5 12,5 12,5 12,5 12,5 12,5 7,2 7,2 7,2 12,5 12,5 12,5 12,5 12,5 12,5 12,5 0,3 6 16 70 100 0,5 0,8 2 2 7 7 15 15 30 30 70 50 60 20 45 55 55 55 55 55 50 50 55 50 55 50 55 50 55 50 55 50 50 50 45 18,7 16 16 13 11,5 20 14,3 16 13,7 10,0 14,0 7,0 14,8 10 10,7 7,0 7,8 8,2 4,8 0,004 0,15 0,4 3,5 7 0,005 0,03 0,05 0,05 0,3 0,7 0,6 3,0 1 3 6 10 10 3 15 SOT89 TO220 TO220 T40S T40S SOT89 SOT89 SLP SLP TO220 T31S T31S T40S T40S T31S T40S (812) 4494000, 4494005, 4494006 npo@symmetron.ru http://store.iiic.cc/ www.symmetron.ru . 2005 . 83