ION The 2N7000 utilizes Calogic's vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package. Part Package 2N7000 BS170L X2N7000 Plastic TO-92 Plastic TO-92 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC -55oC to +150oC PIN CONFIGURATION 2N7000 3 3 1 SOURCE 2 GATE 3 DRAIN 2 1 TO-92 (TO-226AA) 2 BOTTOM VIEW 1 BS170L 1 3 1 DRAIN 2 GATE 3 SOURCE 2 3 1 2 1 2 BOTTOM VIEW CD5 PRODUCT SUMMARY V(BR)DSS (V) rDS(ON) () ID (A) 2N7000 60 5 0.2 BS170 60 5 0.5 P/N 3 2N7000 / BS170L CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) SYMBOL PARAMETERS LIMITS VDS Drain-Source Voltage 60 VGS Gate-Source Voltage 40 ID Continuous Drain Current UNITS V TA = 25oC 0.2 A 0.13 1 TEST CONDITIONS IDM Pulsed Drain Current PD Power Dissipation1 TJ Operating Junction Temperature Range -55 to 150 Tstg Storage Temperature Range -55 to 150 TL L
rature Range device is well suited for switching applications where By of ; 0 0 60V and low on resistance (under 5 ohms) are required. The 2N7000 Plastic 10-92 55,0 to +1 50C 2N7000 is housed in a plastic TO-92 package. BS170L_ Plastic TO-92 55C to +150 C X2N7000 Sorted Chips in Carriers -5BC to +150C PIN CONFIGURATION 2N7000 3 1 SOURCE j _{ 2 GATE 3 DRAIN ~ TO-92 2 L (TO-226AA) , BOTTOM VIEW 1 BS170L 1 DRAIN 2 GATE 3 SOURCE BOTTOM VIEW CD5 PRODUCT SUMMARY PIN Visr)oss DS(ON} Ip (v) (Q) (A) 2N7000 60 5 0.2 BS170 60 5 0.52N7000 /BS170L ABSOLUTE MAXIMUM RATINGS (Ta = 25C unless otherwise specified) calogic SYMBOL PARAMETERS LIMITS UNITS TEST CONDITIONS Vps Drain-Source Voltage 60 Vv Vas Gate-Source Voltage +40 \p Continuous Drain Current 02 Ta= 25C 0.13 A Ta = 100C lom Pulsed Drain Current 0.5 Pp Power Dissipation 04 Ww Ta= 25C 0.16 Ta = 100C Ty Operating Junction Temperature Range -55 to 150 Tstg Storage Temperature Range -55 to 150 C Tt Lead Temperature (1/16" from case for 10 sec.) 300 THERMAL R