Product Datasheet Search Results:
1 Pages, 34 KB, Original- 1N5444A
- Aeroflex / Metelics
- 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 45 KB, Scan- 1N5444ACO
- Aeroflex / Metelics
- 12 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
2 Pages, 99 KB, Scan- 1N5444A06
- Alpha Industries, Inc.
- 30V Vrrm, 12pF Capacitance Varactor Diode
2 Pages, 99 KB, Scan- 1N5444A12
- Alpha Industries, Inc.
- 30V Vrrm, 12pF Capacitance Varactor Diode
2 Pages, 99 KB, Scan- 1N5444A18
- Alpha Industries, Inc.
- 30V Vrrm, 12pF Capacitance Varactor Diode
1 Pages, 61 KB, Scan- 1N5444A
- Api Electronics Group
- VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 36 KB, Scan- 1N5444A
- Thomson-csf
- Condensed Data Book 1977
4 Pages, 258 KB, Scan- 1N5444A
- Codi Semiconductor, Inc.
- JEDEC Registered Voltage Variable Capacitor, DO-7
1 Pages, 9 KB, Original- 1N5444A
- Knox Semiconductor, Inc.
- GENERAL PURPOSE ABRUPT VARACTOR DIODE
2 Pages, 207 KB, Scan- 1N5444A
- Microsemi Corp.
- 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
Product Details Search Results:
Aeroflex.com/1N5444A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"12 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"400","Terminal Position"...
1350 Bytes - 23:04:29, 15 January 2026
Aeroflex.com/1N5444ACO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.6","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"12 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"400","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNS...
1226 Bytes - 23:04:29, 15 January 2026
Alphaind.com/1N5444A06
{"C1/C2 Min. Capacitance Ratio":"3.1","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"400","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"12p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 23:04:29, 15 January 2026
Alphaind.com/1N5444A12
{"C1/C2 Min. Capacitance Ratio":"3.1","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"400","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"12p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 23:04:29, 15 January 2026
Alphaind.com/1N5444A18
{"C1/C2 Min. Capacitance Ratio":"3.1","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"400","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"12p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
807 Bytes - 23:04:29, 15 January 2026
Apitech.com/1N5444A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"12 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...
1394 Bytes - 23:04:29, 15 January 2026
Microsemi.com/1N5444A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"12 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"10 %","Quality Factor-Min":"400","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND...
1272 Bytes - 23:04:29, 15 January 2026
Various/1N5444A
{"C1/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"400","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"12p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
763 Bytes - 23:04:29, 15 January 2026
Various/1N5444ACHIP
{"C1/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"400","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"12p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
743 Bytes - 23:04:29, 15 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| ICSTT_RM444A_EN_P.pdf | 0.14 | 1 | Request | |
| FE_B444AB1D.pdf | 0.74 | 1 | Request | |
| D26MR444A.pdf | 0.04 | 1 | Request | |
| ET_194444A7.pdf | 1.45 | 1 | Request | |
| 990_3444A.pdf | 0.15 | 1 | Request | |
| CS_D270444A.pdf | 0.14 | 1 | Request | |
| CS_B444A943.pdf | 3.24 | 1 | Request | |
| 1SL7444A00.pdf | 0.08 | 1 | Request | |
| 7BWD1444A01.pdf | 0.04 | 1 | Request | |
| 7B34SB0444A01.pdf | 0.04 | 1 | Request | |
| 2RKA024444A0001.pdf | 0.04 | 1 | Request | |
| 1STQ008444A0000.pdf | 0.07 | 1 | Request |
