Datasheet.Directory

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JAN1N5551US","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANS1N5551US","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTX1N5551US","@I(R) (A) (Test Condition)":"1.0"}...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANTXV1N5551US","@I(R) (A) (Test Condition)":"1.0"}...

{"Peak Reverse Current":"1(uA)","Peak Non-Repetitive Surge Current":"100(A)","Peak Reverse Recovery Time":"2000(ns)","Mounting":"Surface Mount","Rad Hardened":"No","Packaging":"Bag","Rectifier Type":"Switching Diode","Operating Temp Range":"-65C to 175C","Peak Forward Voltage":"1.2(V)","Peak Rep Rev Volt":"400(V)","Maximum Forward Current":"5000(mA)","Package Type":"B-MELF","Configuration":"Single","Pin Count":"2"}...

{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Online Catalog":"Standard Diode","Current - Reverse Leakage @ Vr":"1\u00b5A @ 400V","Mounting Type":"Surface Mount","Product Photos":"1N6643US","Standard Package":"1","Series":"-","Capacitance @ Vr, F":"-","Voltage - Forward (Vf) (Max) @ If":"1.2V @ 9A","Supplier Device Package":"D-5B","Reverse Recovery Time (trr)":"2\u00b5s","Datasheets":"1N5550US thru 1N5554US","Family":"Diodes, Rectifiers - Single","Operating Temperature - Junction":"-65\u...

{"Status":"ACTIVE","Diode Type":"RECTIFIER DIODE"}...

{"Peak Rep Rev Volt":"400(V)","Avg. Forward Curr (Max)":"5","Peak Non-Repetitive Surge Current":"100(A)","Rectifier Type":"Switching Diode","Peak Reverse Recovery Time":"2000(ns)","Mounting":"Surface Mount","Forward Current":"5000(mA)","Rad Hardened":"No","Forward Voltage":"1.2(V)","Packaging":"Bag","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 175C","Rev Recov Time":"2000(ns)","Package Type":"B-MELF","Peak Forward Voltage":"1.2(V)","Maximum Forward Current":"5000(mA)","R...

{"Category":"Rectifier","Peak Non-Repetitive Surge Current":"100 A","Description":"Value","Package":"2E-MELF","Peak Average Forward Current":"5 A","Mounting":"Surface Mount","Peak Reverse Current":"1 uA","Peak Reverse Recovery Time":"2000 ns","Operating Temperature":"-65 to 175 \u00b0C","Peak Forward Voltage":"1.2@9A V","Peak Reverse Repetitive Voltage":"400 V","Configuration":"Single","Type":"Switching Diode","Manufacturer":"Microsemi"}...

{"Category":"Rectifier","Peak Reverse Current":"1 uA","Peak Non-Repetitive Surge Current":"100 A","Description":"Value","Package":"2E-MELF","Peak Average Forward Current":"5 A","Mounting":"Surface Mount","Rad Hard":"Yes","Peak Reverse Recovery Time":"2000 ns","Operating Temperature":"-65 to 175 \u00b0C","Peak Forward Voltage":"1.2@9A V","Peak Reverse Repetitive Voltage":"400 V","Configuration":"Single","Type":"Switching Diode","Manufacturer":"Microsemi"}...

{"Category":"Discrete Semiconductor Products","Family":"Diodes, Rectifiers - Single","Series":"*","Datasheets":"1N5550US thru 1N5554US","Standard Package":"100","Other Names":"1086-19412"}...