Datasheet.Directory

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Turn-Off Delay Time":"85(Max) ns","Description":"Value","Maximum Continuous Drain Current":"11 A","Package":"3TO-254AA","Typical Turn-On Delay Time":"35(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"520@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"65(Max) ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Turn-Off Delay Time":"85(Max) ns","Description":"Value","Maximum Continuous Drain Current":"11 A","Package":"3TO-254AA","Typical Turn-On Delay Time":"35(Max) ns","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 125 \u00b0C","RDS-on":"520@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"65(Max) ns"}...

{"Collector Current (DC) ":"10 A","Transistor Polarity":"NPN","Collector-Emitter Voltage":"120 V","Rad Hardened":"No","Mounting":"Through Hole","Emitter-Base Voltage":"10 V","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"1 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-5","Collector-Base Voltage":"150 V","DC Current Gain":"50","Pin Count":"3","Number of Elements":"1"}...