Product Datasheet Search Results:

2N6898TX.pdf4 Pages, 179 KB, Scan
2N6898TX
Microsemi Corp.
25 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
2N6898TXV.pdf4 Pages, 179 KB, Scan
2N6898TXV
Microsemi Corp.
25 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
2N6898TX.pdf1 Pages, 31 KB, Original
2N6898TX
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
2N6898TXV.pdf1 Pages, 31 KB, Original
2N6898TXV
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.

Product Details Search Results:

Microsemi.com/2N6898TX
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"60 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"25 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","C...
1377 Bytes - 00:27:48, 14 January 2026
Microsemi.com/2N6898TXV
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"60 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"25 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","C...
1383 Bytes - 00:27:48, 14 January 2026

Documentation and Support

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