Product Datasheet Search Results:
7 Pages, 77 KB, Original- 2SK2007
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET
7 Pages, 77 KB, Original- 2SK2007-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET
11 Pages, 62 KB, Original- 2SK2007
- Renesas Electronics
- 20 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 102 KB, Original- 2SK2007-E
- Renesas Electronics
- 20 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/2SK2007
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"250 V","Tran...
1437 Bytes - 02:31:36, 14 January 2026
Renesas.com/2SK2007-E
{"Terminal Finish":"TIN COPPER","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1502 Bytes - 02:31:36, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2009.pdf | 0.27 | 1 | Request |
