Product Datasheet Search Results:
4 Pages, 74 KB, Original- 2SK2764-01R
- Fuji Electric Corp. Of America
- 4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fujielectric.co.jp/2SK2764-01R
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"254 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"800 V","Tran...
1489 Bytes - 00:17:30, 12 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2764-01R.pdf | 0.07 | 1 | Request |
