Product Datasheet Search Results:
4 Pages, 74 KB, Original- 2SK2876-01MR
- Fuji Electric Corp. Of America
- 6 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Fujielectric.co.jp/2SK2876-01MR
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"197 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Tr...
1509 Bytes - 05:25:04, 18 January 2026
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2876-01MR.pdf | 0.07 | 1 | Request |
