Product Datasheet Search Results:
6 Pages, 208 KB, Original- 2SK3498
- Toshiba America Electronic Components, Inc.
- 1 A, 400 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET
3 Pages, 197 KB, Original- 2SK3498(2-7B1B)
- Toshiba America Electronic Components, Inc.
- 1 A, 450 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET
3 Pages, 197 KB, Original- 2SK3498(2-7J1B)
- Toshiba America Electronic Components, Inc.
- 1 A, 450 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET
6 Pages, 214 KB, Original- 2SK3498(Q)
- Toshiba
- Trans MOSFET N-CH Si 400V 1A 3-Pin(2+Tab) New PW-Mold
Product Details Search Results:
Toshiba.co.jp/2SK3498
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"113 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...
1546 Bytes - 09:06:06, 05 January 2026
Toshiba.co.jp/2SK3498(2-7B1B)
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"113 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1568 Bytes - 09:06:06, 05 January 2026
Toshiba.co.jp/2SK3498(2-7J1B)
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"113 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Brea...
1585 Bytes - 09:06:06, 05 January 2026
Toshiba.co.jp/2SK3498(Q)
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"400(V)","Power Dissipation":"20(W)","Operating Temp Range":"-55C to 150C","Package Type":"New PW-Mold","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1461 Bytes - 09:06:06, 05 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3498.pdf | 0.20 | 1 | Request |
