Product Datasheet Search Results:
- 2SK3612-01L
- Fuji Electric Corp. Of America
- 14 A, 250 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Fujielectric.co.jp/2SK3612-01L
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"129 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1516 Bytes - 20:30:13, 17 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3612-01L.pdf | 0.24 | 1 | Request |




