Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3750 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"300 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.3750 W","Package Shape":"UNSPECIFIED","Status":"DISCONTINUED","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"300 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transistor Appli...

{"t(acc) Max. (S)":"8n","Package":"DIMM","Output Config":"3-State","P(D) Max.(W) Power Dissipation":"5","Nom. Supp (V)":"3.3","Pins":"168","Military":"N","Bits Per Word":"64","Technology":"CMOS","Number of Words":"1M"}...

{"t(acc) Max. (S)":"9n","Package":"DIMM","Output Config":"3-State","P(D) Max.(W) Power Dissipation":"5","Nom. Supp (V)":"3.3","Pins":"168","Military":"N","Bits Per Word":"64","Technology":"CMOS","Number of Words":"1M"}...

{"t(acc) Max. (S)":"8n","Package":"DIMM","Output Config":"3-State","P(D) Max.(W) Power Dissipation":"5","Nom. Supp (V)":"3.3","Pins":"168","Military":"N","Bits Per Word":"64","Technology":"CMOS","Number of Words":"1M"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3750 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"300 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...

{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED PACAKGE-4","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"0.0500 A","Feedback Cap-Max (Crss)":"0.7000 pF","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND...

{"Logic Level Family":"CMOS and T","Package":"QFP","Number of User I/Os":"144","Package Body Material":"Ceramic","Vsup(+) Nom.(V) Pos.Sup.Volt.":"5","VIL Max. (TTL) (V)":"0.8","Gate Capacity":"9000","Configurable Logic Blocks":"320","VIH Min. (TTL) (V)":"2.0","Quiescent Current Max (TTL)":"20m","Vsup (+) Maximum (V)":"7.0","Pins":"164","Military":"N","Technology":"CMOS","Quiescent Current Max (CMOS)":"10m","Program Data (Bits)":"64160"}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"3000 ohm","Feedback Cap-Max (Crss)":"0.7000 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Series":"-","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 10\u00b5A","PCN Assembly/Origin":"SIL-062-2014-Rev-0 30/May/2014","Package / Case":"TO-206AF, TO-72-4 Metal Can","Supplier Device Package":"TO-72","Datasheets":"3N163,3N164","Rds On (Max) @ Id, Vgs":"300 Ohm @ 100\u00b5A, 20V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"375mW","Standard Package":"200","Drain to...

{"Mounting Style":"SMD/SMT","Vds - Drain-Source Breakdown Voltage":"- 30 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"30 V","Brand":"Vishay / Siliconix","Id - Continuous Drain Current":"50 mA","Pd - Power Dissipation":"375 mW","Packaging":"Bulk","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"300 Ohms","Package / Case":"TO-206AF-4","Typical Turn-Off Delay Time":"25 ns","Configuration":"Single...