Product Datasheet Search Results:
- BSB008NE2LX
- Infineon Technologies Ag
- 46 A, 25 V, 0.0008 ohm, N-CHANNEL, Si, POWER, MOSFET
- BSB008NE2LXXT
- Infineon Technologies
- MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
- BSB008NE2LXXUMA1
- Infineon Technologies
- MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
Product Details Search Results:
Infineon.com/BSB008NE2LX
{"Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"2.8 W","Avalanche Energy Rating (Eas)":"600 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"46 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8.00E-4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1544 Bytes - 22:35:26, 15 January 2026
Infineon.com/BSB008NE2LXXT
{"Factory Pack Quantity":"5000","Vds - Drain-Source Breakdown Voltage":"25 V","Transistor Polarity":"N-Channel","Qg - Gate Charge":"240 nC","Package / Case":"MG-WDSON-2","Part # Aliases":"BSB008NE2LXXUMA1 SP000880866","Fall Time":"32.4 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Tradename":"OptiMOS","Configuration":"Single Dual Drain Dual Source","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Id - Cont...
1771 Bytes - 22:35:26, 15 January 2026
Infineon.com/BSB008NE2LXXUMA1
{"Product Category":"MOSFET","Series":"BSB008NE2","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1104 Bytes - 22:35:26, 15 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSB008NE2LX.pdf | 1.50 | 1 | Request |






