Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1700 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"25 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.6800 A","Channel Type":"N-CHANNEL","...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"25 Ohm @ 170mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.3V @ 94\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP324E6327T SP000011117","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP324","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Moun...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.3V @ 94\u00b5A","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSP324","Rds On (Max) @ Id, Vgs":"25 Ohm @ 170mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1,000","Input Capacitance (Ciss) @ Vds":"154pF @ 25V","Drain to Source Voltage (Vdss)":"400V","Current -...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.3V @ 94\u00b5A","Input Capacitance (Ciss) @ Vds":"154pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP324","Rds On (Max) @ Id, Vgs":"25 Ohm @ 170mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mou...

{"Category":"MOSFET","Maximum Drain Source Voltage":"400 V","Typical Rise Time":"4.4 ns","Typical Turn-Off Delay Time":"17 ns","Description":"Value","Maximum Continuous Drain Current":"0.17 A","Package":"4SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"4.6 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"25000@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"68 ns"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.17 A","Mounting":"Surface Mount","Drain-Source On-Volt":"400 V","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.8 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"25 ohm","Number of Elements":"1"}...