Datasheet.Directory

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.5400 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8250 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 V","Transistor Application":"SWIT...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"25 ns","Typical Turn-Off Delay Time":"21 ns","Description":"Value","Maximum Continuous Drain Current":"0.54 A","Package":"3SOT-23","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"9 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"650@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"24 ns"}...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"55 V","Transistor Polarity":"N-Channel","Qg - Gate Charge":"2.26 nC","Package / Case":"SOT-23-3","Part # Aliases":"BSS670S2LH6327XTSA1 SP000928950","Fall Time":"32 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Id - Continuous Drain Current":"540 mA","Rds On - Drai...

{"Product Category":"MOSFET","Series":"BSS670S2","Brand":"Infineon Technologies","Packaging":"Reel","RoHS":"Details","Manufacturer":"Infineon"}...