Product Datasheet Search Results:
- EDI7F33IMC100BNC
- Electronic Designs, Inc.
- 1 Meg x 32 Flash Module
- EDI7F33IMC120BNC
- Electronic Designs, Inc.
- 1 Meg x 32 Flash Module
- EDI7F33IMC150BNC
- Electronic Designs, Inc.
- 1 Meg x 32 Flash Module
- EDI7F33IMC100BNC
- Microsemi Corp.
- 1M X 32 FLASH 5V PROM MODULE, 100 ns, SMA80
- EDI7F33IMC100BNI
- Microsemi Corp.
- 1M X 32 FLASH 5V PROM MODULE, 100 ns, SMA80
- EDI7F33IMC120BNC
- Microsemi Corp.
- 1M X 32 FLASH 5V PROM MODULE, 120 ns, SMA80
- EDI7F33IMC120BNI
- Microsemi Corp.
- 1M X 32 FLASH 5V PROM MODULE, 120 ns, SMA80
- EDI7F33IMC150BNC
- Microsemi Corp.
- 1M X 32 FLASH 5V PROM MODULE, 150 ns, SMA80
- EDI7F33IMC150BNI
- Microsemi Corp.
- 1M X 32 FLASH 5V PROM MODULE, 150 ns, SMA80
- EDI7F33IMC
- N/a
- 1Megx32 Flash Module
- EDI7F33IMC100BNC
- N/a
- 1Megx32 Flash Module
- EDI7F33IMC-BNC
- N/a
- 1Megx32 Flash Module
Product Details Search Results:
Microsemi.com/EDI7F33IMC100BNC
{"Status":"ACTIVE","Supply Voltage-Max (Vsup)":"5.5 V","Access Time-Max (tACC)":"100 ns","Package Body Material":"UNSPECIFIED","Supply Voltage-Min (Vsup)":"4.5 V","Terminal Form":"NO LEAD","Operating Mode":"ASYNCHRONOUS","Parallel/Serial":"PARALLEL","Package Style":"MICROELECTRONIC ASSEMBLY","Number of Words":"1.05E6 words","Memory Width":"32","Number of Words Code":"1M","Supply Voltage-Nom (Vsup)":"5 V","Memory Density":"3.36E7 deg","Number of Functions":"1","Terminal Position":"SINGLE","Organization":"1M ...
1356 Bytes - 15:56:53, 15 January 2026
Microsemi.com/EDI7F33IMC100BNI
{"Status":"ACTIVE","Supply Voltage-Max (Vsup)":"5.5 V","Access Time-Max (tACC)":"100 ns","Package Body Material":"UNSPECIFIED","Supply Voltage-Min (Vsup)":"4.5 V","Terminal Form":"NO LEAD","Operating Mode":"ASYNCHRONOUS","Parallel/Serial":"PARALLEL","Package Style":"MICROELECTRONIC ASSEMBLY","Number of Words":"1.05E6 words","Memory Width":"32","Number of Words Code":"1M","Supply Voltage-Nom (Vsup)":"5 V","Memory Density":"3.36E7 deg","Number of Functions":"1","Terminal Position":"SINGLE","Organization":"1M ...
1357 Bytes - 15:56:53, 15 January 2026
Microsemi.com/EDI7F33IMC120BNC
{"Status":"ACTIVE","Supply Voltage-Max (Vsup)":"5.5 V","Access Time-Max (tACC)":"120 ns","Package Body Material":"UNSPECIFIED","Supply Voltage-Min (Vsup)":"4.5 V","Terminal Form":"NO LEAD","Operating Mode":"ASYNCHRONOUS","Parallel/Serial":"PARALLEL","Package Style":"MICROELECTRONIC ASSEMBLY","Number of Words":"1.05E6 words","Memory Width":"32","Number of Words Code":"1M","Supply Voltage-Nom (Vsup)":"5 V","Memory Density":"3.36E7 deg","Number of Functions":"1","Terminal Position":"SINGLE","Organization":"1M ...
1356 Bytes - 15:56:53, 15 January 2026
Microsemi.com/EDI7F33IMC120BNI
{"Status":"ACTIVE","Supply Voltage-Max (Vsup)":"5.5 V","Access Time-Max (tACC)":"120 ns","Package Body Material":"UNSPECIFIED","Supply Voltage-Min (Vsup)":"4.5 V","Terminal Form":"NO LEAD","Operating Mode":"ASYNCHRONOUS","Parallel/Serial":"PARALLEL","Package Style":"MICROELECTRONIC ASSEMBLY","Number of Words":"1.05E6 words","Memory Width":"32","Number of Words Code":"1M","Supply Voltage-Nom (Vsup)":"5 V","Memory Density":"3.36E7 deg","Number of Functions":"1","Terminal Position":"SINGLE","Organization":"1M ...
1355 Bytes - 15:56:53, 15 January 2026
Microsemi.com/EDI7F33IMC150BNC
{"Status":"ACTIVE","Supply Voltage-Max (Vsup)":"5.5 V","Access Time-Max (tACC)":"150 ns","Package Body Material":"UNSPECIFIED","Supply Voltage-Min (Vsup)":"4.5 V","Terminal Form":"NO LEAD","Operating Mode":"ASYNCHRONOUS","Parallel/Serial":"PARALLEL","Package Style":"MICROELECTRONIC ASSEMBLY","Number of Words":"1.05E6 words","Memory Width":"32","Number of Words Code":"1M","Supply Voltage-Nom (Vsup)":"5 V","Memory Density":"3.36E7 deg","Number of Functions":"1","Terminal Position":"SINGLE","Organization":"1M ...
1356 Bytes - 15:56:53, 15 January 2026
Microsemi.com/EDI7F33IMC150BNI
{"Status":"ACTIVE","Supply Voltage-Max (Vsup)":"5.5 V","Access Time-Max (tACC)":"150 ns","Package Body Material":"UNSPECIFIED","Supply Voltage-Min (Vsup)":"4.5 V","Terminal Form":"NO LEAD","Operating Mode":"ASYNCHRONOUS","Parallel/Serial":"PARALLEL","Package Style":"MICROELECTRONIC ASSEMBLY","Number of Words":"1.05E6 words","Memory Width":"32","Number of Words Code":"1M","Supply Voltage-Nom (Vsup)":"5 V","Memory Density":"3.36E7 deg","Number of Functions":"1","Terminal Position":"SINGLE","Organization":"1M ...
1357 Bytes - 15:56:53, 15 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| ABB_MEDIUM_VOLTAGE_PRODUCTS_OUR_ONE_STOP_APPROACH_FOR_EVERY_MEDIUM_VOLTAGE_APPLICATION.pdf | 2.56 | 1 | Request | |
| A_NOVEL_TEST_METHOD_FOR_PREDICTING_CRUSHING_ELASTICITY_IN_MEDIUM_FLUTING.pdf | 0.65 | 1 | Request | |
| PHILIPS_RF_MANUAL_3RD_EDITION.pdf | 2.16 | 1 | Request | |
| NXP_RF_MANUAL_19TH_EDITION.pdf | 7.43 | 1 | Request | |
| NXP_RF_MANUAL_10TH_EDITION.pdf | 4.47 | 1 | Request | |
| PHILIPS_APPENDIX_RF_MANUAL_6TH_EDITION.pdf | 2.62 | 1 | Request | |
| NXP_RF_MANUAL_12TH_EDITION.pdf | 2.35 | 1 | Request | |
| PHILIPS_RF_MANUAL_6TH_EDITION.pdf | 1.00 | 1 | Request | |
| NXP_RF_MANUAL_20TH_EDITION.pdf | 4.40 | 1 | Request | |
| NXP_RF_MANUAL_17TH_EDITION.pdf | 7.89 | 1 | Request | |
| PHILIPS_RF_MANUAL_4TH_EDITION.pdf | 4.58 | 1 | Request | |
| NXP_RF_MANUAL_11TH_EDITION.pdf | 5.41 | 1 | Request |















