Product Datasheet Search Results:
11 Pages, 779 KB, Original- F3L150R07W2E3_B11
- Infineon Technologies
- Trans IGBT Module N-CH 650V 150A 14-Pin
Product Details Search Results:
Infineon.com/F3L150R07W2E3_B11
{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"150 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"15","Brand":"Infineon Technologies","Pd - Power Dissipation":"335 W","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"650 V","Packaging":"Tray","Maximum Gate Emitter Voltage":"+/- 20 V","Mounting Style":"SMD/SMT","Package / Case":"Module","Collector-Emitter Saturation Voltage":"1.45 V","Configuration...
1671 Bytes - 13:03:06, 17 January 2026
