Product Datasheet Search Results:

FF450R07ME4_B11.pdf10 Pages, 669 KB, Original
FF450R07ME4_B11
Infineon Technologies
IGBT Modules IGBT Module 450A 650V

Product Details Search Results:

Infineon.com/FF450R07ME4_B11
{"Gate-Emitter Leakage Current":"100 nA","Continuous Collector Current at 25 C":"560 A","Product Category":"IGBT Modules","Minimum Operating Temperature":"- 40 C","Factory Pack Quantity":"6","Brand":"Infineon Technologies","Product":"IGBT Silicon Modules","Collector- Emitter Voltage VCEO Max":"650 V","Packaging":"Tray","Maximum Gate Emitter Voltage":"+/- 20 V","Mounting Style":"Screw","Pd - Power Dissipation":"1450 W","Collector-Emitter Saturation Voltage":"1.95 V","Configuration":"Dual","Maximum Operating ...
1642 Bytes - 05:35:17, 18 January 2026

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
FF450R07ME4_B11.pdf0.651Request
FF450R07ME4_B11.pdf0.651Request