Product Datasheet Search Results:
12 Pages, 781 KB, Original- IPI086N10N3G
- Infineon Technologies
- Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262
12 Pages, 781 KB, Original- IPI086N10N3GXKSA1
- Infineon Technologies
- Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262
Product Details Search Results:
Infineon.com/IPI086N10N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"110 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"80 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0086 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"320 A","Channel Type":"N-CHANNEL",...
1559 Bytes - 13:36:55, 14 January 2026
Infineon.com/IPI086N10N3GXKSA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"42 ns","Typical Turn-Off Delay Time":"31 ns","Description":"Value","Maximum Continuous Drain Current":"80 A","Package":"3TO-262","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"18 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"8.6@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"8 ns"}...
1552 Bytes - 13:36:55, 14 January 2026
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPI086N10N3G.pdf | 0.91 | 1 | Request |
