Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b112(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.5(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"20(V)","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"TSOP","Type":"Power MOSFET","Pin Count":"6","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b112(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"6.5(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"20(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"TSOP","Type":"Power MOSFET","Pin Count":"6","Number of Elements":"1"}...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","Tran...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 2.5V Drive","Vgs(th) (Max) @ Id":"1.2V @ 250\u00b5A","Package / Case":"SOT-23-6","Current - Continuous Drain (Id) @ 25\u00b0C":"6.5A (Ta)","Gate Charge (Qg) @ Vgs":"22nC @ 5V","Rds On (Max) @ Id, Vgs":"30 mOhm @ 6.5A, 4.5V","Product Photos":"SOT-23-6","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","PCN Other":"Multiple Changes 20/Jan/2014","Datasheets":"IRLMS...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 2.5V Drive","Vgs(th) (Max) @ Id":"1.2V @ 250\u00b5A","Package / Case":"SOT-23-6","Gate Charge (Qg) @ Vgs":"22nC @ 5V","Product Photos":"SOT-23-6","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"30 mOhm @ 6.5A, 4.5V","Datasheets":"IRLMS2002","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"20V","PCN Obsolescence/ EOL":"Multiple Devices 0...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 2.5V Drive","Vgs(th) (Max) @ Id":"1.2V @ 250\u00b5A","Package / Case":"SOT-23-6","Gate Charge (Qg) @ Vgs":"22nC @ 5V","Rds On (Max) @ Id, Vgs":"30 mOhm @ 6.5A, 4.5V","Product Photos":"SOT-23-6","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","PCN Other":"Multiple Changes 20/Jan/2014","Datasheets":"IRLMS2002PbF","FET Type":"MOSFET N-Channel, Metal Oxide","Stand...