Product Datasheet Search Results:
12 Pages, 1094 KB, Original- IXTP2N100
- Ixys Corporation
- High Voltage Power MOSFETs
12 Pages, 1094 KB, Original- IXTP2N100A
- Ixys Corporation
- High Voltage Power MOSFETs
4 Pages, 147 KB, Original- IXTP2N100P
- Ixys
- MOSFET N-CH 1000V 2A TO-220 - IXTP2N100P
12 Pages, 1094 KB, Original- IXTP2N100A
- Ixys Corporation
- High Voltage Power MOSFETs
1 Pages, 66 KB, Scan- IXTP2N100
- Sharp Electronics Corp.
- 1000 V, 2 A, sourse-drain diode
4 Pages, 262 KB, Scan- IXTP2N100A
- Zilog
- 2 A, 1000 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
4 Pages, 147 KB, Original- IXTP2N100P
- Zilog
- 2 A, 1000 V, 7.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Ixys.com/IXTP2N100
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IXT(A,P)2N100","Rds On (Max) @ Id, Vgs":"7 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"100W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"1000V (1kV)","Current - C...
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Ixys.com/IXTP2N100A
{"C(iss) Max. (F)":"900p","Absolute Max. Power Diss. (W)":"75","r(DS)on Max. (Ohms)":"6.0","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.0","@(VDS) (V) (Test Condition)":"20","Package":"TO-220AB","I(DSS) Min. (A)":"200u","Military":"N","t(r) Max. (s) Rise time":"45n","V(BR)DSS (V)":"1.0k","t(f) Max. (s) Fall time.":"20n","g(fs) Min. (S) Trans. conduct.":"800m","I(D) Abs. Drain Current (A)":"2.0"}...
922 Bytes - 16:10:43, 11 January 2026
Ixys.com/IXTP2N100P
822 Bytes - 16:10:43, 11 January 2026
Zilog.com/IXTP2N100
{"Terminal Finish":"PURE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technolo...
1507 Bytes - 16:10:43, 11 January 2026
Zilog.com/IXTP2N100A
{"Terminal Finish":"PURE TIN","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
1427 Bytes - 16:10:43, 11 January 2026
Zilog.com/IXTP2N100P
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5 A","Channel Type":"N-CHANNEL","F...
1526 Bytes - 16:10:43, 11 January 2026
