Product Datasheet Search Results:
1 Pages, 35 KB, Scan- JANTXV2N6788U
- Defense Logistics Agency
- 6 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
7 Pages, 200 KB, Original- JANTXV2N6788
- International Rectifier
- 6 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
1 Pages, 35 KB, Scan- JANTXV2N6788U
- International Rectifier
- 6 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
7 Pages, 643 KB, Original- JANTXV2N6788
- Microsemi Corp.
- 6 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39
1 Pages, 35 KB, Scan- JANTXV2N6788U
- Microsemi Corp.
- 6 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
3 Pages, 577 KB, Original- JANTXV2N6788
- Semicoa
- POWER, FET
Product Details Search Results:
Aeroflex.com/JANTXV2N6788U
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Channel Type":"N-CHANNEL","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ...
1329 Bytes - 05:18:55, 03 January 2026
Irf.com/JANTXV2N6788
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1491 Bytes - 05:18:55, 03 January 2026
Irf.com/JANTXV2N6788U
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Channel Type":"N-CHANNEL","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm",...
1318 Bytes - 05:18:55, 03 January 2026
Microsemi.com/JANTXV2N6788
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"350 mOhm @ 6A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/555","Package / Case":"TO-205AF Metal Can","Supplier Device Package":"TO-205AF (TO-39)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6788,2N6790","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","C...
1580 Bytes - 05:18:55, 03 January 2026
Microsemi.com/JANTXV2N6788U
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"350 mOhm @ 6A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500/555","Package / Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6788U,2N6790U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (Vdss)":"1...
1601 Bytes - 05:18:55, 03 January 2026
Semicoa.com/JANTXV2N6788
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
707 Bytes - 05:18:55, 03 January 2026
Documentation and Support
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