Product Datasheet Search Results:
6 Pages, 194 KB, Original- JANTXV2N6851
- Infineon Technologies Ag
- Trans MOSFET P-CH 200V 4A 3-Pin TO-39
7 Pages, 131 KB, Original- JANTXV2N6851
- International Rectifier
- 4 A, 200 V, 1.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7 Pages, 200 KB, Original- JANTXV2N6851U
- International Rectifier
- 4 A, 200 V, 1.68 ohm, P-CHANNEL, Si, POWER, MOSFET
6 Pages, 293 KB, Scan- JANTXV2N6851
- Microsemi Corp.
- 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-39
3 Pages, 676 KB, Original- JANTXV2N6851
- Semicoa
- POWER, FET
Product Details Search Results:
Infineon.com/JANTXV2N6851
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"4(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1447 Bytes - 23:20:19, 13 January 2026
Irf.com/JANTXV2N6851
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"75 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.68 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"200...
1478 Bytes - 23:20:19, 13 January 2026
Irf.com/JANTXV2N6851U
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"171 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.68 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTO...
1532 Bytes - 23:20:19, 13 January 2026
Microsemi.com/JANTXV2N6851
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"P-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8000 ohm","Number of Terminals":"3","DS Breakdown...
1269 Bytes - 23:20:19, 13 January 2026
Semicoa.com/JANTXV2N6851
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
709 Bytes - 23:20:19, 13 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 8106851.pdf | 0.05 | 1 | Request | |
| 536851.pdf | 0.15 | 1 | Request | |
| 196851.pdf | 0.17 | 1 | Request | |
| 156851.pdf | 0.16 | 1 | Request | |
| 2568514.pdf | 0.12 | 1 | Request | |
| 176851.pdf | 0.24 | 1 | Request | |
| 8116851.pdf | 0.15 | 1 | Request | |
| 6851.pdf | 0.12 | 1 | Request | |
| 556851.pdf | 0.05 | 1 | Request | |
| X-286851.pdf | 0.66 | 1 | Request | |
| SMC_36851747.pdf | 2.25 | 1 | Request | |
| SI_109768511.pdf | 3.24 | 1 | Request |
