Product Datasheet Search Results:
66 Pages, 2036 KB, Original- K4C89093AF-GCF50
- Samsung Semiconductor Division
- 32M X 9 DDR DRAM, 0.6 ns, PBGA144
Product Details Search Results:
Samsung.com/K4C89093AF-GCF50
{"Terminal Finish":"TIN LEAD","Terminal Pitch":"1 mm","Access Mode":"FOUR BANK PAGE BURST","Terminal Form":"BALL","Operating Temperature-Max":"70 Cel","Number of Words Code":"32M","Supply Voltage-Nom (Vsup)":"2.5 V","Temperature Grade":"COMMERCIAL","Package Shape":"RECTANGULAR","Status":"ACTIVE","Operating Temperature-Min":"0.0 Cel","Number of Words":"3.36E7 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"3.02E8 deg","Supply Voltage-Max (Vsup)":"2.62 V","Number of ...
1634 Bytes - 06:34:18, 13 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| INSTRUCTION_ACF5000_ACF_NT_CYBER_SECURITY_SUPPLEMENT_TO_THE_OPERATING_AND_COMMISSIONING_INSTRUCTION_FOR_THE_ACF5000_AND_ACF_NT_MULTI_COMPONENT_FTIR_ANALYZER_SYSTEM.pdf | 0.21 | 1 | Request | |
| 20CF502A0ANNBNB0.pdf | 5.02 | 1 | Request | |
| 20CF502J0ANNBNA0.pdf | 5.02 | 1 | Request | |
| 20CF502H0ANNBNA0.pdf | 5.02 | 1 | Request | |
| 20CF502N0CNNBNA0.pdf | 5.02 | 1 | Request | |
| 20CF502A0ANNBNA0.pdf | 5.02 | 1 | Request | |
| 20CF502N0ANNBNA0.pdf | 5.02 | 1 | Request | |
| FE_8173CF50.pdf | 12.28 | 1 | Request | |
| 3SU1052-2CF50-0AA0-ZY19.pdf | 51.69 | 1 | Request | |
| 3SU1052-2CF50-0AA0-ZX90.pdf | 51.69 | 1 | Request | |
| 6FM1470-8CF50.pdf | 8.13 | 1 | Request | |
| 3SU1052-2CF50-0AA0-ZY12.pdf | 51.69 | 1 | Request |
