Product Datasheet Search Results:
1 Pages, 39 KB, Original- PTF10019
- Advanced Semiconductor, Inc.
- UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
6 Pages, 216 KB, Original- PTF10019
- Ericsson Microelectronics
- 70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
6 Pages, 121 KB, Original- PTF10019/26R3
- Infineon Technologies
- Transistor Mosfet N-CH 65V 0.001A 3(20237)
6 Pages, 121 KB, Original- PTF10019R2
- Infineon Technologies
- Transistor Mosfet N-CH 65V 0.001A 3(20237)
6 Pages, 121 KB, Original- PTF10019R3
- Infineon Technologies
- Transistor Mosfet N-CH 65V 0.001A 3(20237)
6 Pages, 121 KB, Original- PTF10019R4
- Infineon Technologies
- Transistor Mosfet N-CH 65V 0.001A 3(20237)
Product Details Search Results:
Advancedsemiconductor.com/PTF10019
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"FM-2","Terminal Form":"FLAT","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"RF POWER","Package ...
1348 Bytes - 08:41:36, 13 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2THF100198R1001.pdf | 0.49 | 1 | Request | |
| 2THF100191R1001.pdf | 0.49 | 1 | Request | |
| 2THF100190R1001.pdf | 0.49 | 1 | Request | |
| 2THF100195R1001.pdf | 0.48 | 1 | Request | |
| 2THF100193R1001.pdf | 0.49 | 1 | Request | |
| 2THF100194R1001.pdf | 0.49 | 1 | Request | |
| 2THF100196R1001.pdf | 0.49 | 1 | Request | |
| 2THF100197R1001.pdf | 0.48 | 1 | Request | |
| 2THF100199R1001.pdf | 0.49 | 1 | Request | |
| 2THF100192R1001.pdf | 0.49 | 1 | Request |
