Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3.9V @ 1mA","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"21A (Tc)","Gate Charge (Qg) @ Vgs":"95nC @ 10V","Product Photos":"TO-263","Product Training Modules":"CoolMOS\u2122 CP High Voltage MOSFETs Converters","Rds On (Max) @ Id, Vgs":"190 mOhm @ 13.1A, 10V","Datasheets":"SPB21N50C3","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","...

{"Polarity":"N","Drain-Source On-Res":"0.19(ohm)","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"21(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Packaging":"Tape and Reel","Power Dissipation":"208(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"500 V","Typical Rise Time":"5 ns","Typical Turn-Off Delay Time":"67 ns","Description":"Value","Maximum Continuous Drain Current":"21 A","Package":"3TO-263","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"10 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"190@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"4.5 ns"}...